SK hynix has launched a High NA EUV lithography machine aimed at mass-producing advanced DRAM chips more efficiently than ever before. This innovative system, named TWINSCAN EXE:5200B, is located at the company’s facility in Icheon, South Korea.

Intel had been working on rival technology but is now facing competition from SK hynix’s new machine, which boasts print capabilities that are 1.7 times more precise than earlier models. This advancement promises to increase transistor density by 2.9 times, enhancing the company’s capability to produce higher quality memory chips at lower costs.

“We expect the addition of the critical infrastructure to bring our technological vision we have been pursuing into reality,” said Seon Yong Cha. “We aim to enhance our leadership in the AI memory space with the cutting-edge technology required by the fast-growing AI and next-generation computing markets.”
“We expect the addition of the critical infrastructure to bring our technological vision we have been pursuing into reality.”
Translation: “We anticipate that these advancements will help actualize our ongoing innovations in technology.”

This breakthrough places SK hynix in a prime position in the booming technology of AI data centers, which are increasingly relying on sophisticated DRAM solutions.